semiconductor radiation detectors (Verlag GmbH)
90
Structured Review
Verlag GmbH
semiconductor radiation detectors
Semiconductor Radiation Detectors, supplied by Verlag GmbH, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/semiconductor+radiation+detectors/semiconductor+radiation+detectors/10__1021_slash_acs__jpcc__3c00684-390-6-10
Average 90 stars, based on 1 article reviews
Semiconductor Radiation Detectors, supplied by Verlag GmbH, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/semiconductor+radiation+detectors/semiconductor+radiation+detectors/10__1021_slash_acs__jpcc__3c00684-390-6-10
Average 90 stars, based on 1 article reviews
semiconductor radiation detectors - by Bioz Stars,
2026-09
90/100 stars
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other:Article Title: Chemical vapor deposition diamond based multilayered radiation detector: Physical analysis of detection properties Article Snippet: Chemical vapor deposition diamond based multilayered radiation detector: Physical analysis of detection properties S. Almaviva, Marco Marinelli, E. Milani, G. Prestopino, A. Tucciarone, C. Verona, G. Verona-Rinati, M. Angelone , M. Pillon, I. Dolbnya, K. Sawhney, and N. Tartoni Citation: Journal of Applied Physics 107, 014511 (2010); doi: 10.1063/1.3275501 View online: http://dx.doi.org/10.1063/1.3275501 View Table of Contents: http://scitation.aip.org/content/aip/journal/jap/107/1?ver=pdfcov Published by the AIP Publishing Articles you may be interested in Single Schottky-barrier photodiode with interdigitated-finger geometry: Application to diamond Appl.. Phys.. Lett. Article Title: Applications of an energy‐dispersive pnCCD for X‐ray reflectivity: Investigation of interdiffusion in Fe–Pt multilayers Article Snippet: A frame store pn-junction CCD (pnCCD) detector was applied to study thermally induced interdiffusion in Fe/Pt thin film multilayers (MLs) in a temperature range between 300 and 585 K. Based on the energy resolution of the detector the reflectivity was measured simultaneously in a spectral range between 8 keV Article Title: DEPFET transistor having a large dynamic range Article Snippet: The DEPFET transistor may be of conventional construction apart from the degressive characteristic curve profile provided according to the invention, such that reference is made to the publication by Gerhard Lutz already mentioned above: “Semiconductor Radiation Detectors”, Article Title: Betavoltaic Nuclear Battery: A Review of Recent Progress and Challenges as an Alternative Energy Source Article Snippet: Nuclear energy is considered a suitable and eco-friendly alternative for combating the rising greenhouse gases in the atmosphere from excessive fossil fuel consumption.. Betavoltaic battery is a form of nuclear technology that utilizes the decay energy of β-emitting radioisotopes to produce electrical power.. Owing to its long shelf life, high specific energy density, and ability to work under extreme conditions, it has been a subject of considerable research attention in the past few years. Functional Assay:Article Title: Radiation detector for detecting low-intensity radiation by means of avalanche amplification Article Snippet: .. The structure and operational method of a DEPFET of this type is described, for example, by Gerhard LUTZ: Article Title: Radiation detector for detecting low-intensity radiation by means of avalanche amplification Article Snippet: .. The read-out electrode A of the avalanche amplifier 8 is connected to a gate G of the transistor amplifier 9 which in this exemplary embodiment is configured as a p-channel MOSFET and has an implanted source S and an implanted drain D. The structure and operational method of a p-channel MOSFET is described, for example, by Gerhard LUTZ: Article Title: Radiation detector for detecting low-intensity radiation by means of avalanche amplification Article Snippet: .. The structure and operational method of the n-channel SSJFET is described, for example, by Gerhard LUTZ: |